IV族元素による新奇二次元物質創生ユニット
Young Research Unit Toward Creation of Two-Dimensional Group-IV Materials, Nagoya University, Japan
What We Do
本研究ユニットでは、次世代の省エネ・超高速デバイスの材料として期待されているIV族元素から成る新奇二次元物質(シリセン、ゲルマネン、スタネンなど)や薄膜材料に対して、その結晶成長技術と物性制御技術の確立を目指しています。(名古屋大学研究大学強化促進事業 若手新分野創成研究ユニット(2015〜2018)、同・フロンティア(2019〜2020)は無事卒業しましたが、随時更新予定です。)
Our research target is a 2D honeycomb sheet of Si, Ge, and Sn, known as silicene, germanene, and stanene, respectively, and also a thin film composed of the group-IV alloys. The fundamental materials physics and technologies contributing to innovative nano-electronics will be established through this research.
News
August 12, 2020 · KURO研究成果をまとめた書籍がNTSから出版されました。監修の柚原先生からお誘いいただき、ほんの一部ですが下記の節を執筆しました。 ポストグラフェン材料の創製と用途開発最前線 ~二次元ナノシートの物性...January 20, 2020 · KURO名古屋大学工学研究科の情報誌(PRESSe)に柚原先生の記事『ナノテク新素材の至高の目標 ー グラフェンの従兄弟「プランベン」の発見に成功!ー』が掲載されています。ゲルマネン、スタネン、プランベ...October 5, 2019 · KURO解説記事が応用物理に掲載されました。黒澤は「絶縁膜上 Ge1-xSnx 混晶の多結晶成長」のセクションを担当しました。 中塚理, 黒澤昌志, “ゲルマニウム錫Ⅳ族混晶薄膜の結晶成長と電子物性...Publications
since 2015/04
二次元物質 (2D Materials)
- M. Itoh, M. Araidai, A. Ohta, O. Nakatsuka, and M. Kurosawa, “Crystal structure change in multilayer GeH flakes by hydrogen desorption under ultrahigh vacuum environments,” Japanese Journal of Applied Physics, Vol. 61, No. SC, pp. SC1048-1〜6 (2022/02/18).
- A. Ohta, M. Kobayashi, N. Taoka, M. Ikeda, K. Makihara, and S. Miyazaki, "Segregation control for ultrathin Ge layer in Al/Ge(111) system," Japanese Journal of Applied Physics, Vol. 61, No. SA, pp. SA1014-1~7 (2021/12/15).
- J. Yuhara, H. Muto, M. Araidai, M. Kobayashi, A. Ohta, S. Miyazaki, S. Takakura, M. Nakatake, and G. Le Lay, "Single germanene phase formed by segregation through Al(111) thin films on Ge(111)," 2D Materials, Vol. 8, No. 4, pp. 045039 (2021/10/12).(名大 柚原先生との共同研究です)
- J. Yuhara, T. Ogikubo, M. Araidai, S. Takakura, M. Nakatake, and G. Le Lay, "In-plane strain-free stanene on a Pd2Sn(111) surface alloy," Physical Review Materials Vol. 5, Issue 5, pp. 053403-1〜7 (2021/05/19).(名大 柚原先生との共同研究です)
- K. O. Hara, S. Kunieda, J. Yamanaka, K. Arimoto, M. Itoh, and M. Kurosawa, “Close-spaced evaporation of CaGe2 films for scalable GeH film formation,” Materials Science in Semiconductor Processing, Vol. 132, pp. 105928-1〜6 (2021/05/03).(山梨大 原先生との共同研究です)
- J. Yuhara, H. Shimazu, M. Kobayashi, A. Ohta, S. Miyazaki, S. Takakura, M. Nakatake, and G. Le Lay, "Epitaxial growth of massively parallel germanium nanoribbons by segregation through Ag(110) thin films on Ge(110)," Applied Surface Science, Vol. 550, No. 1, pp.149236-1〜7 (2021/02/24)(名大 柚原先生との共同研究です)
- A. Ohta, K. Yamada, H. Sugawa, N. Taoka, M. Ikeda, K. Makihara, and S. Miyazaki, "Surface flattening and Ge crystalline segregation of Ag/Ge structure by thermal anneal," Japanese Journal of Applied Physics, Vol. 60, No. SB, pp. SBBK05-1〜6 (2021/02/03).
- M. Araidai, M. Itoh, M. Kurosawa, A. Ohta, and K. Shiraishi, “Hydrogen Desorption from Silicane and Germanane Crystals: Toward Creation of Free-Standing Monolayer Silicene and Germanene,” Journal of Applied Physics, Vol. 128, Issue 12, pp. 125301-1〜5 (2020/09/22).
- 洗平昌晃, "計算科学による IV 族二次元物質の研究,"「ポストグラフェン材料の創製と用途開発最前線」-二次元ナノシートの物性評価、構造解析、合成、成膜プロセス技術、応用展開-(柚原淳司 監修), エヌ・ティー・エス, pp. 51-58 (2020/04/22).
- 黒澤昌志, 大田晃生, "共晶系で生じる析出現象を応用したIV族系ナノシート形成技術,'' 「ポストグラフェン材料の創製と用途開発最前線」-二次元ナノシートの物性評価、構造解析、合成、成膜プロセス技術、応用展開-(柚原淳司 監修), エヌ・ティー・エス, pp. 227-236(2020/04/22).
- T. Ogikubo, H. Shimazu, Y. Fujii, K. Ito, A. Ohta, M. Araidai, M. Kurosawa, G. L. Lay, J. Yuhara, “Continuous Growth of Germanene and Stanene Lateral Heterostructures,” Advanced Materials Interfaces, Vol. 7, No. 10, pp. 1902132-1〜7 (2020/03/30).(名大 柚原先生との共同研究です)
- W. Pang, K. Nishino, T. Ogikubo, M. Araidai, M. Nakatake, G. Le Lay, and J. Yuhara, "Epitaxial growth of honeycomb-like stanene on Au(111)," Applied Surface Science, Vol. 517, 1 July 2020, pp. 146224-1〜6 (2020/03/28).(名大 柚原先生との共同研究です)
- M. Kobayashi, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, N. Taoka, T. Shimizu, K. Makihara, and S. Miyazaki, “Formation of Ultrathin Segregated-Ge Crystal on Al/Ge(111) Surface,” Japanese Journal of Applied Physics, Vol. 59, No. SG, pp. SGGK15-1〜6 (2020/2/28).
- J. Yuhara, N. Isobe, K. Nishino, Y. Fujii, L. H. Chan, M. Araidai, and M. Nakatake, "Morphology and Electronic Structure of Sn-Intercalated TiS2(0001) Layers," The Journal of Physical Chemistry C, Vol. 123, Issue 36, pp. 22293-22298 (2019/08/30).(名大 柚原先生との共同研究です)
- A. Hattori, K. Yada, M. Araidai, M. Sato, K. Shiraishi, and Y. Tanaka, "Influence of edge magnetization and electric fields on zigzag silicene, germanene and stanene nanoribbons," Journal of Physics: Condensed Matter, Vol. 31, No. 10, pp. 105302-1〜15 (2019/01/21).(名大 田仲研との共同研究です)
- J. Yuhara, H. Shimazu, K. Ito, A. Ohta, M. Araidai, M. Kurosawa, M. Nakatake, and G. Le Lay, “Germanene Epitaxial Growth by Segregation through Ag(111) Thin Films on Ge(111),” ACS Nano, Vol. 12, Issue 11, pp. 11632-11637 (2018/10/29) .【プレスリリース(Press Release)、中日新聞、 日刊工業新聞】(名大 柚原先生との共同研究です)
- K. Ito, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki, “Growth of two-dimensional Ge crystal by annealing of heteroepitaxial Ag/Ge(111) under N2 ambient,” Japanese Journal of Applied Physics, Vol. 57, No. 6S1, pp. 06HD08-1〜5 (2018/05/24). 【MNC Paper Award】
- K. Ito, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki, “Segregated SiGe Ultrathin Layer Formation and Surface Planarization on Epitaxial Ag(111) by Annealing of Ag/SiGe(111) with Different Ge/(Si+Ge) Compositions,” Japanese Journal of Applied Physics, Vol. 57, No. 4S, pp. 04FJ05-1〜6 (2018/03/09).
- M. Araidai, M. Kurosawa, A. Ohta, and K. Shiraishi, “First-principles study on adsorption structures and electronic states of stanene on α-alumina surface,” Japanese Journal of Applied Physics, Vol. 56, No. 9, pp. 095701-1〜4 (2017/08/03).
- A. Hattori, S. Tanaya, K. Yada, M. Araidai, M. Sato, Y. Hatsugai, K. Shiraishi, and Y. Tanaka, "Edge states of hydrogen terminated monolayer materials: silicene, germanene and stanene ribbons," Journal of Physics: Condensed Matter, Vol. 29, No. 11, pp. 115302-1〜10 (2017/02/07).(名大 田仲研との共同研究です)
- 黒澤昌志, 大田晃生, 洗平昌晃, 財満鎭明, “金属誘起層交換法によるAg上Si, Ge極薄膜の形成 ーシリセン, ゲルマネンの創製を目指してー,” 表面科学, Vol. 37, No. 8, pp. 374-379 (2016/08/20).【研究紹介】
- M. Kurosawa, A. Ohta, M. Araidai, and S. Zaima, “Surface-segregated Si and Ge ultrathin films formed by Ag-induced layer exchange process,” Japanese Journal of Applied Physics, Vol. 55, No. 8S1, pp. 08NB07-1〜5 (2016/07/05).【JJAP 2016 Spotlights】【JJAP 2016 Highlights】
その他 (Others)
- [New] K. Sahara, R. Yokogawa, Y. Shibayama, Y. Hibino, M. Kurosawa, and A. Ogura, “Investigation of Band Structure in Strained Single Crystalline Si1-xSnx,” ECS Transactions, Vol. 109, No. 4, pp. 359-366 (2022/09).(明治大学小椋先生との共同研究です)
- [New] M. Kurosawa, M. Nakata, T. Zhan, M. Tomita, T. Watanabe, and O. Nakatsuka, “Sn-incorporation effect on thermoelectric properties of Sb-doped Ge-rich Ge1−x−ySixSny epitaxial layers grown on GaAs(001),” Japanese Journal of Applied Physics, Vol. 61, No. 8, pp. 085502-1〜6 (2022/07/15).(早稲田大学渡邉孝信先生との共同研究です)
- K. Niwa, T. Iizuka, M. Kurosawa, Y. Nakamura, H. O. Valencia, H. Kishida, O. Nakatsuka, T. Sasaki, N. Gaida, and M. Hasegawa, “High-pressure polycrystalline thin-film synthesis and semiconducting property of platinum pernitride,” AIP Advances, Vol. 12, Issue 5, pp.055318-1〜5 (2022/5/13).(名古屋大学丹羽先生との共同研究です)
- R. Oishi, K. Asaka, L. Bolotov, N. Uchida, M. Kurosawa, and O. Nakatsuka, “Solid-phase crystallization of ultra-thin amorphous Ge layers on insulators,” Japanese Journal of Applied Physics, accepted (2022/04/07).
- Y. Peng, L. Miao, C. Liu, H. Song, M. Kurosawa, O. Nakatsuka, S. Y. Back, J. S. Rhyee, M. Murata, S. Tanemura, T. Baba, T. Baba, T. Ishizaki, and T. Mori, “Constructed Ge quantum dots and Sn precipitate SiGeSn hybrid film with high thermoelectric performance at low temperature region,” Advanced Energy Materials, published on-line (2021/11/27).
- M. Kurosawa, and O. Nakatsuka, “Thermoelectric properties of tin-incorporated group-IV thin films,” ECS Transactions, Vol. 104, No. 4, pp. 183-189 (2021/10/01).
- H. Lai, Y. Peng, J. Gao, H. Song, M. Kurosawa, O. Nakatsuka, T. Takeuchi, and L. Miao, “Reinforcement of power factor in N-type multiphase thin film of Si1-x-yGexSny by mitigating the opposing behavior of Seebeck coefficient and electrical conductivity,” Applied Physics Letters, Vol. 119, Issue 11, pp. 113903-1〜6 (2021/09/17).
- O. Nakatsuka, S. Asaba, M. Kurosawa, M. Sakashita, N. Taoka, and S. Zaima, “Formation and Characterization of Ge1–x–YSixSny/Ge Hetero Junction Structures for Photovoltaic Cell Application,” ECS Transactions, Vol. 102, No. 4, pp. 3-9 (2021/05/07).
- Y. Peng, S. Zhu, H. Lai, J. Gao, M. Kurosawa, O. Nakatsuka, S. Tanemura, B. Peng, and L. Miao, “No external load measurement strategy for micro thermoelectric generator based on high-performance Si1-x-yGexSny film,” Journal of Materiomics, Vol. 7, Issue 4, pp. 665-671 (2020/12/11).
- H. Lai, Y. Peng, J. Gao, M. Kurosawa, O. Nakatsuka, T. Takeuchi, and L. Miao, “Silicon‐based low-dimensional materials for Thermal Conductivity Suppression: Recent Advances and New Strategies to High Thermoelectric Efficiency,” Japanese Journal of Applied Physics, Vol. 60, No. SA, pp. SA0803-1〜15 (2020/10/19).
- R. Yokogawa, M. Kurosawa, and A. Ogura, “Evaluation of Strain-Shift Coefficients for SiSn by Raman Spectroscopy,” ECS Transactions, Vol. 98, No. 5, pp. 291-300 (2020/09/23).(明治大学小椋先生との共同研究です)
- O. Nakatsuka, S. Shibayama, M. Kurosawa, and M. Sakashita, “Heteroepitaxy and Strain Engineering of Germanium-Silicon-Tin Ternary Alloy Semiconductor Thin Films for Energy Band Design,” ECS Transactions, Vol. 98, No. 5, pp. 149-156 (2020/09).
- Y. Peng, H. Lai, C. Liu, J. Gao, M. Kurosawa, O. Nakatsuka, T. Takeuchi, S. Zaima, S. Tanemura, and L. Miao, “Realizing high thermoelectric performance in p-type Si1-x-yGexSny thin films at ambient temperature by Sn modulation doping,” Applied Physics Letters, Vol. 117, Issue 5, pp. 053903-1〜5 (2020/08/07).
- S. Koike, R. Yanagisawa, M. Kurosawa, and M. Nomura, “Design of a Planar-type Uni-leg SiGe Thermoelectric Generator,” Japanese Journal of Applied Physics, Vol. 59, No. 7, pp. 074003-1〜5 (2020/07/02).(東大生産研 野村先生との共同研究です)
- H. Kobayashi, R. Akaishi, S. Kato, M. Kurosawa, N. Usami, and Y. Kurokawa, “Preparation and thermoelectric characterization of phosphorus-doped Si nanocrystals/silicon oxide multilayers,” Japanese Journal of Applied Physics, Vol. 59, No. SG, pp. SGGF09-1〜6 (2020/2/28).(名大 黒川先生との共同研究です)
- N. Okamoto, R. Yanagisawa, A. Roman, Md. M. Alam, K. Sawano, M. Kurosawa, and M. Nomura, “Semi-ballistic thermal conduction in polycrystalline SiGe nanowires,” Applied Physics Letters, Vol.115, Issue 25, pp. 253101-1〜4 (2019/12/18).(東大生産研 野村先生との共同研究です)
- O. Nakatsuka, M. Fukuda, M. Sakashita, M. Kurosawa, S. Shibayama, and S. Zaima, “Development of Germanium-Tin-Related Semiconductor Heterostructures for Energy Band Design in Electronic and Optoelectronic Applications,” ECS Transactions, Vol. 92, Issue 4, pp. 41-46 (2019/10/13).
- Y. Peng, L. Miao, J. Gao, C. Liu, M. Kurosawa, O. Nakatsuka, and S. Zaima, “Realizing High Thermoelectric Performance at Ambient Temperature by Ternary Alloying in Polycrystalline Si1-x-yGexSny Thin Films with Boron Ion Implantation,” Scientific Reports, Vol. 9, No.1, pp.14342-1〜9 (2019/10/04).
- 中塚理, 黒澤昌志, “ゲルマニウム錫Ⅳ族混晶薄膜の結晶成長と電子物性,” 応用物理, Vol. 88, No. 9, pp. 597-603 (2019/09/10).【研究紹介】
- M. Fukuda, D. Rainko, M. Sakashita, M. Kurosawa, D. Buca, O. Nakatsuka, and S. Zaima, “Formation and Optoelectronic Property of Strain-relaxed Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny Double Heterostructure on Boron-Ion-Implanted Ge(001) Substrate,” Japanese Journal of Applied Physics, Vol. 58, No. SI, pp. SIIB23-1〜6 (2019/07/10).
- K. Takahashi, H. Ikenoue, M. Sakashita, O. Nakatsuka, S. Zaima, and M. Kurosawa, “Operation of thin-film thermoelectric generator of Ge-rich poly-Ge1-xSnx on SiO2 fabricated by a low thermal budget process,” Applied Physics Express, Vol. 12, No. 5, pp. 051016-1〜6 (2019/05/01).
- M. Kurosawa, Y. Inaishi, R. Tange, M. Sakashita, O. Nakatsuka, and S. Zaima, “Synthesis of heavily Ga-doped Si1−xSnx/Si heterostructures and their valence-band-offset determination,” Japanese Journal of Applied Physics, Vol. 58, No. SA, pp. SAAD02-1〜4 (2018/11/26).
- M. Fukuda, D. Rainko, M. Sakashita, M. Kurosawa, D. Buca, O. Nakatsuka, and S. Zaima, “Optoelectronic properties of High-Si-content-Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny Double-Heterostructure,” Semiconductor Science and Technology, Vol. 33, No. 12, pp. 124018-1〜9 (2018/10/26).
- T. Maeda, W. H. Chang, T. Irisawa, H. Ishii, H. Oka, M. Kurosawa, Y. Imai, O. Nakatsuka, and N. Uchida: “Ultra-thin Germanium-Tin on Insulator structure through the direct bonding technique,” Semiconductor Science and Technology, Vol. 33, No. 12, pp. 124002-1〜5 (2018/10/24).
- M. Kurosawa, Y. Imai, T. Iwahashi, K. Takahashi, M. Sakashita, O. Nakatsuka, and S. Zaima, “A New Application of Ge1-xSnx: Thermoelectric Materials,” ECS Transactions, Vol. 86, issue 7, pp. 321-328 (2018/09/30).
- R. Yokogawa, S. Hashimoto, K. Takahashi, S. Oba, M. Tomita, M. Kurosawa, T. Watanabe, and A. Ogura, “Evaluation of Laterally Graded Silicon Germanium Wires for Thermoelectric Devices Fabricated by Rapid Melting Growth,” ECS Transactions, Vol. 86, Issue 7, pp. 87-93 (2018/09/30).
- 黒澤昌志, “エネルギーハーベスティング応用に向けたIV族混晶(Ge1-xSnx)薄膜の結晶成長,” 日本熱電学会学会誌, Vol. 15, No.1, pp.26-31 (2018/08/24). (print-only; ISSN 1349-4279)【研究紹介】
- K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima, “Dopant behavior in heavily doped polycrystalline Ge1-xSnx layers prepared with pulsed laser annealing in water,” Japanese Journal of Applied Physics, Vol. 57, No. 4S, pp. 04FJ02-1〜6 (2018/02/28).【JJAP 2018 Spotlights】
- K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima, “High n-type Sb dopant activation in Ge-rich poly-Ge1-xSnx layers on SiO2 using pulsed laser annealing in flowing water,” Applied Physics Letters, Vol. 112, Issue 6, pp. 062104-1〜5 (2018/02/06).
- M. Kurosawa, M. Kato, K. Takahashi, O. Nakatsuka, and S. Zaima, “Self-organized lattice-matched epitaxy of Si1-xSnx alloys on (001)-oriented Si, Ge, and InP substrates,” Applied Physics Letters, Vol. 111, Issue 19, pp. 192106-1〜4 (2017/11/10).
- M. Kurosawa, O. Nakatsuka, and S. Zaima, “Growth and Applications of Si1-xSnx Thin Films,” ECS Transactions, Vol. 80, Issue 4, pp. 253-258 (2017/08).
- Y. Nagae, M. Kurosawa, M. Araidai, O. Nakatsuka, K. Shiraishi, and S. Zaima, “Evaluation of energy band offset of Si1-xSnx semiconductors by numerical calculation using density functional theory,” Japanese Journal of Applied Physics, Vol. 56, No. 4S, pp.04CR10-1〜5 (2017/03/14).
- I. Yoshikawa, M. Kurosawa, W. Takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima, “Low-temperature crystallization of Ge-rich GeSn layers on Si3N4 substrate,” Materials Science in Semiconductor Processing, Vol. 70, pp. 151-155 (2017/01/19).
- M. Kurosawa, K. Liu, M. Izawa, I. Tsunoda, and S. Zaima, “Thermoelectric Properties of Ge-Rich GeSn Films Grown on Insulators,” ECS Transactions, Vol. 75, Issue 8, pp. 481-487 (2016/09/23).
- Y. Nagae, M. Kurosawa, S. Shibayama, M. Araidai, M. Sakashita, O. Nakatsuka, K. Shiraishi, and S. Zaima, “Density functional study for crystalline structures and electronic properties of Si1–xSnx binary alloys,” Japanese Journal of Applied Physics, Vol. 55, No. 8S2, pp. 08PE04-1〜4 (2016/07/14).
- A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima, “Growth of ultrahigh-Sn-content Ge1−x Snx epitaxial layer and its impact on controlling Schottky barrier height of metal/Ge contact,” Japanese Journal of Applied Physics, Vol. 55, No. 4S, pp. 04EB12-1〜6 (2016/03/29).
- K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima, “Low thermal budget n-type doping into Ge(001) surface using ultraviolet laser irradiation in phosphoric acid solution,” Applied Physics Letters, Vol. 108, Issue 5, pp. 052104-1〜4 (2016/02/03).
- S. Zaima, O. Nakatsuka, T. Yamaha, T. Asano, S. Ike, A. Suzuki, M. Kurosawaa, W. Takeuchi, M. Sakashita, “Challenges of Energy Band Engineering with New Sn-Related Group IV Semiconductor Materials for Future Integrated Circuits,” ECS Transactions, Vol. 69, Issue 10, pp. 89-98 (2015/10).
- S. Zaima, O. Nakatsuka, N. Taoka, M. Kurosawa, W. Takeuchi, and M. Sakashita, “Growth and Application of GeSn-Related Group-IV Semiconductor Materials,” Science and Technology of Advanced Materials, Vol.16, Issue 4, pp. 043502-1〜22 (2015/07/13). (Open Access)
以前を含む黒澤の成果等はこちら (including previous ones)
- Google Scholar(日本語論文も含む)
- ResearcherID
- ORCID
- Researchmap
- 科研費 (KAKEN)
- 名大教員情報 (NU Database)
*獲得した研究助成金、学会発表のリストは、名大教員情報に記載しております。Awards etc.
since 2015/04
- [New] 研究成果が「ISPlasma2022/IC-PLANTS2022 The Best Oral Presentation Awards」に選出 (2022/03/10).(2年連続頂きました)
- 研究成果が「ISPlasma2021/IC-PLANTS2021 The Best Oral Presentation Awards」に選出 (2021/03/11)
- 志満津宏樹君(柚原研M1)が「第18回日本表面真空学会中部支部学術講演会 講演奨励賞」を受賞 (2018/12/15)(名大 柚原淳司先生のグループ他との共同研究です)
- 日刊工業新聞に掲載:名大、ゲルマニウム結晶から単原子層シートを分離作製 (2017/11/19)(名大 柚原淳司先生のグループ他との共同研究です)
- 研究成果が「MNC2017 Award for Outstanding Paper」に選出 (2018/11/14)
- 中日新聞に掲載:ナノテク新素材、簡単に作製 名大グループが成功 (2018/10/31)(名大 柚原淳司先生のグループ他との共同研究です)
- プレスレスリリース:世界初!ゲルマニウム結晶からゲルマニウム単原子層シートの分離創製に成功!(2018/10/31)(名大 柚原淳司先生のグループ他との共同研究です); English Press Release is here. (2018/11/14)
- 志満津宏樹君(柚原研M1)が「日本物理学会学生優秀発表賞(第4回、領域9)」を受賞 (2018/09/11)(名大 柚原淳司先生のグループとの共同研究です)
- 高橋恒太君(財満・中塚研D3)が「第2回フォノンエンジニアリング研究グループ研究会 ポスター賞」を受賞 (2018/07/14)
- 研究成果が「JJAP Spotlights 2018」に選出 (2018/04/18)
- 伊藤公一君(宮崎研M2)が「第43回応用物理学会講演奨励賞」を受賞 (2018/03)
- 高橋恒太君(財満・中塚研D2)が「電子デバイス界面テクノロジー研究会(第22回研究会)安田賞」を受賞 (2018/01/21)
- 高橋恒太君(財満・中塚研D1)の第41回応用物理学会講演奨励賞受賞記念講演(多結晶GeSnへのn型ドーピング技術)に関する取材記事がNature Photonicsに掲載:N. Horiuchi, “View from... JSAP Spring Meeting: A marriage of materials and optics,” Nature Photonics, Vol. 11, pp. 271–273 (2017).
- 高橋恒太君(財満・中塚研D1)が「第41回応用物理学会講演奨励賞」を受賞 (2017/03)
- 若手新分野創成研究ユニットの特別インタビュー記事がNU Researchに掲載 (2017/03/22)
- 伊藤公一君(宮崎研M1)が「第4回東海支部学術講演会発表奨励賞」を受賞 (2017/01/07)
- 研究成果がAPEX/JJAP宣伝用ブックレットに掲載(2016年Spotlights論文(注目論文)の一つとして紹介されました)
- 研究成果が「Highlights of 2016」に選出(Special Issue: Scanning Probe Microscopyの下のShow article listをクリック)
- 研究成果が「JJAP Spotlights 2016」に選出 (2016/08/18)
- 長江祐樹君(財満・中塚研M2)が「IWDTF Young Paper Award」を受賞 (2015/11/04)
- 高橋恒太君(財満・中塚研M2)が「IWJT2015 Best Paper Award」を受賞 (2015/06/11)
Link
- 名古屋大学 研究大学強化促進事業 (B3ユニット、B3フロンティア) (Program for Promoting the Enhancement of Research Universities, NU)
- 名古屋大学 大学院工学研究科 物質科学専攻 (Dept. Materials Physics, NU)
- 名古屋大学 大学院工学研究科 電子工学専攻 (Dept. Electronics, NU)
- 名古屋大学 未来材料・システム研究所 (IMaSS, NU)
- ナノ電子デバイス工学研究グループ(中塚研) (Nakatsuka Lab., NU)
- 機能集積デバイス研究グループ(宮崎研) (Miyazaki Lab., NU)
- フロンティア計算物質科学研究グループ(白石研) (Shiraishi Lab., NU)
- エネルギー機能材料・表面ナノ構造研究グループ(柚原研) (Yuhara Lab., NU)
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